GPDP3260 rectifier diode voltage up to 2200 v average current 2600 a surge current 31 ka blocking characteristics characteristic conditions v rrm repetitive peak reverse voltage 2200 v v rsm non-repetitive peak reverse voltage 2200 v i rrm repetitive peak reverse current, max. v rrm , single phase, half wave, tj = 175 c 100 ma forward characteristics i f(av) average forward current sine wave,180 conduction, tc = 100c 2600 a i f(rms) r.m.s. forward current sine wave,180 conduction, tc = 100c 4084 a i fsm surge forward current non rep. half sine wave, 50 hz, v r = 0 v, t j = t jmax 31 ka i2t i2 t for fusing coordination 4805 ka2s v f(to) threshold voltage t j = t jmax 0,79 v r f forward slope resistance t j = t jmax 0,115 m w v fm peak forward voltage, max forward current i f = 4000 a, tj = 25c 1,22 v switching characteristics q rr rverse recovery charge, typ t j = t jmax , i f = 2000 a, di/dt = -5 a/s 1900 c i rr reverse recovery current v r = 100 v a t rr reverse recovery time s v fp forward recovery voltage t j = t jmax , di/dt = a/s v thermal and mechanical characteristics r th(j-c) thermal resistance (junction to case) double side cooled 0,024 c/w r th(c-h) thermal resistance (case to heatsink) double side cooled 0,001 c/w t jmax max operating junction temperature 200 c t stg storage temperature -40 / 200 c f clamping force 10% 22 kn mass 500 g document GPDP3260t001 value gps - green power semiconductors spa factory: via ungaretti 10, 16157 genova, italy phone: +39-010-667 1307 fax: +39-010-667 2459 web: www.gpsemi.it e-mail: info@gpsemi.it green power semiconductors
rectifier diode GPDP3260 distributed by document GPDP3260t001 maximum surge current d.s. cooled 0 5 10 15 20 25 30 35 1 10 100 number of cycle current pulses [n] i fsm [a] green power semiconductors thermal impedance (j-c) 0,000 0,005 0,010 0,015 0,020 0,025 0,030 0,001 0,01 0,1 1 10 100 time [s] z th(j-c) [c / w] forward voltage drop 0 1000 2000 3000 4000 5000 6000 0,5 0,7 0,9 1,1 1,3 1,5 v f [v] i f [a] tj=tjmax current rating - sine wave 100 120 140 160 180 200 220 0 1000 2000 3000 4000 i f [a] case temperature [c] 180 90 120 60 30 power loss - sine wave 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 1000 2000 3000 4000 i f [a] p f [w] 180 120 90 60 30 i n the interest of product improvement green power semiconductors reserves the right to change any specification given in this data sheet without notice.
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